FDMC86106LZ datasheet

Маркировка

FDMC86106LZ
Производитель

Fairchild Semiconductor
Описание

Fairchild Semiconductor FDMC86106LZ Continuous Drain Current: 7.5 A Current - Continuous Drain (id) @ 25?° C: 3.3A Drain To Source Voltage (vdss): 100V Drain-source Breakdown Voltage: 100 V Fet Feature: Logic Level Gate Fet Type: MOSFET N-Channel, Metal Oxide Forward Transconductance Gfs (max / Min): 11 S Gate Charge (qg) @ Vgs: 6nC @ 10V Input Capacitance (ciss) @ Vds: 310pF @ 50V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: * Package / Case: * Power - Max: 2.3W Power Dissipation: 19 W Rds On (max) @ Id, Vgs: 103 mOhm @ 3.3A, 10V Resistance Drain-source Rds (on): 103 mOhms Series: PowerTrench?® Transistor Polarity: N-Channel Vgs(th) (max) @ Id: 2.2V @ 250?µA
Количество страниц

7 шт.
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262,22 KB